%PDF-1.6 % 1 0 obj <>stream application/pdfIEEE2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD);2019; ; ; reverse conductionintegrated structuresmulti-channelIntegrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD StructuresSheng LiSiyang LiuChi ZhangJiaxing WeiLong ZhangWeifeng SunYouhua ZhuTingting ZhangDongsheng WangYinxia SunYiheng LiTinggang Zhu 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)447 May 2019450 endstream endobj 2 0 obj <>stream h?tU? ?6?6\ו]E:D %@z#B E?`JMDQATPQTQ?Mw?I&I&3?q??{dO{?@ʿ@M߿zk0t? ?ҥ`?d?$?V`_C?U?5Y?7?,c????=:ߜwnp&[c\OUl?`x4wG~u?Aua-]ѹС˫